Carrier recombination in InGaAs(P) Quantum Well Laser Structures: Band gap and Temperature Dependence

Using a combination of temperature and pressure dependence measurements, we investigate the relative importance of recombination processes in InGaAs-based QW lasers. We find that radiative and Auger recombination are important in high quality InGaAs material. At 1.5μm, Auger recombination accounts for 80% Ith at room temperature reducing to ~50% at 1.3μm and ~15% at 980nm. We also find that Auger recombination dominates the temperature dependence of Ith around room temperature over the entire operating wavelength range studied (980nm-1.5μm).